45
Crystal oscillator
1 OE or ST
4 GND
5 OUT
8 V
DD
NO.
1 OE
7 GND
8 OUT
14 V
DD
NO.
#14
#8
#1
#1
#4
#8
#5
#7
5.3 Max.
2.54 Min.
0.2 Min.
0.2 Min.
6.36
External dimensions
SG-51 series
Specifications (characteristics)
(Unit: mm)
SG51P 9353B
E
SG531PTJC
16.0000MHz C
60.0000M
9353B
E
5.3 Max.
2.54 Min.
15.24
0.51
7.62
0.51
0.25
0.25
90 to
105
90 to
105
7.62
7.62
19.8 Max.
13.7 Max.
6.6
SG-531 series
Pin terminal
Pin terminal
Note.
OE Pin (P, PTJ, PH, PTW, PHW, PCW)
OE pin - "H" or "open" : Specified frequency output.
OE pin - "L" : Output is high impedance.
ST pin (STW, SHW, SCW)
ST pin - "H" or "open" : Specified frequency output.
ST pin - "L" : Output is low level (weak pull - down), oscillation stops.
FULL-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-51 series
Item
Output frequency range
Power source
voltage
Temperature
range
Frequency stability
Current consumption
Output disable current
Duty
Output voltage
Output load
condition (fan out)
Output enable/disable input voltage
Output
rise time
Output
fall time
Oscillation start up time
Aging
Shock resistance
Symbol
f
0
V
DD
-GND
V
DD
T
STG
T
OPR
f/f
0
Iop
I
OE
t
w
/t
V
OH
V
OL
C
L
N
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
HALF-SIZE DIP HIGH-FREQUENCY CRYSTAL OSCILLATOR
SG-531 series
CMOS level
TTL level
CMOS level
TTL level
CMOS level
TTL level
CMOS
TTL
Specifications
SG-51P/531P
SG-51PTJ/531PTJ
SG-51PH/531PH
26.0001 MHz to 66.6667 MHz
-0.3
V to +7.0 V
-0.5 V to +7.0 V
5.0
V0.5 V
-55 C to +125 C
-20
C to +70 C (-40 C to +85 C)
B: 50
x 10
-6
C: 100
x 10
-6
23 mA Max.
35 mA Max.
12 mA Max.
28 mA Max.
20 mA Max.
40 % to 60 %
--
40 % to 60 %
45 % to 55 %
--
V
DD
-0.4 V Min.
2.4 V Min.
V
DD
-0.4 V Min.
0.4 V Max.
50 pF Max.
--
50 pF Max.
10 TTL Max.
5 TTL Max.
--
2.0 V Min.
3.5 V Min.
2.0 V Min.
0.8 V Max.
1.5 V Max.
0.8 V Max.
8 ns Max.
8 ns Max.
4 ms Max.
10 ms Max.
5 x 10
-6
/year Max.
20 x 10
-6
Max.
Remarks
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
B type is possible up to 55.0 MHz
No load condition
OE=GND
1/2 V
DD
level
1.4 V level
I
OH
= -400 A (P,PTJ) /-4 mA (PH)
I
OL
= 16 mA (P) / 8 mA (PTJ) / 4mA (PH)
C
L
15 pF
I
IH
=1 A Max. (OE=V
DD
)
I
IL
= -100 A Min. (OE=GND), PTJ: I
IL
= -500 A Min. (OE=GND)
CMOS load: 20 %80 % V
DD
TTL load: 0.4 V2.4 V
CMOS load: 80 %20 % V
DD
TTL load: 2.4 V0.4 V
More than for 1 ms until V
DD
=0 V4.5 V
Time at 4.5 V to be 0 s
Ta=+25 C, V
DD
=5 V,first year
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s
2
x 0.3 ms x 1/2
sine wave in 3 directions
Note: Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
External by-pass capacitor is recommended.
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
1.0250 MHz to
26.0000 MHz
--
5 ns Max.
--
5 ns Max.
7 ns Max.
--
7 ns Max.
--
Pin compatible with full-size metal can. (SG-51 series)
Pin compatible with half-size metal can. (SG-531 series)
Cylindrical AT-cut crystal unit builtin, thus assuring high reliability.
Use of CMOS IC enables reduction of current consumption.
Actual size
Product number (please refer to page 1)
Q3 2 5 1 0 x x x x x x x 0 0
Q3 2 5 3 1 x x x x x x x 0 0
SG-531
SG-51
46
Crystal oscillator
Specifications (characteristics)
Output frequency range
Power source
voltage
Temperature
range
Frequency stability
Current consumption
Output disable current
Standby current
Duty
Output voltage
Output load condition (fan out)
Output enable disable input voltage
Output rise time
Output fall time
Oscillation start up time
Aging
Shock resistance
f
O
V
DD-
GND
V
DD
T
STG
T
OPR
f/f0
I
OP
I
OE
I
ST
tw/t
V
OH
V
OL
CL
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
-20
C to +70
C
-40
C to +85
C
No load condition
OE=GND (PCG)
ST=GND (SCG)
50 % V
DD
, CL = 25 pF
I
OH
= -8 mA
I
OL
= 8 mA
OE, ST
OE, ST
20 % to 80 % V
DD
, CL
25 pF
80 % to 20 % V
DD
CL
25 pF
Time at minimum operating voltage to be 0 s
Ta=+25
C, V
DD
=3.3 V, First year
Item
Remarks
Symbol
Specifications
SG-531PCG
SG-531SCG
1.5000 MHz to 26.0000 MHz
-0.5 V to +7.0 V
2.7 V to 3.6 V
-55
C to +125
C
-40
C to +85
C
B :
50 x 10
-6
C :
100 x 10
-6
M :
100 x 10
-6
12 mA Max.
10 mA Max.
--
--
50
A Max.
45 % to 55 %
V
DD
-0.4 V Min.
0.4 V Max.
25 pF
70 % V
DD
Min.
20 % V
DD
Max.
4.0 ns Max.
4.0 ns Max.
12 ms Max.
5 x 10
-6
/ year Max.
20 x 10
-6
Max.
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Specifications (characteristics)
Output frequency range
Power source
voltage
Temperature
range
Frequency stability
Current consumption
Output disable current
Standby current
Duty
Output voltage
Output load condition (fan out)
Output enable disable input voltage
Output rise time
Output fall time
Oscillation start up time
Aging
Shock resistance
f
O
V
DD-
GND
V
DD
T
STG
T
OPR
f/f
0
I
OP
I
OE
I
ST
tw/t
V
OH
V
OL
CL
V
IH
V
IL
t
TLH
t
THL
t
OSC
fa
S.R.
Refer to page 31. "Frequency range"
Stored as bare product after unpacking
Refer to page 31. "Frequency range"
-20
C to +70
C
-40
C to +80
C
No load condition
OE=GND(P
W)
ST=GND(S
W)
TTL load : 1.4 V, CL = Max.
TTL load : 1.4 V, 5TTL + 15 pF, fo
66.6667 MHz
CMOS load : 50% V
DD
, CL = Max.
CMOS load : 50% V
DD
, CL = 25 pF, fo
66.6667 MHz
CMOS load : 50% V
DD
, CL = 25 pF, fo
40.0 MHz
I
OH
= -16 mA (
TW/
HW)/-8 mA(
CW)
I
OL
= 16 mA (
TW/
HW)/8 mA(
CW)
fo
135 MHz
fo
90 MHz
fo
66.6667 MHz
fo
135 MHz
fo
125 MHz
fo
66.6667MHz
fo
40.0 MHz
OE,ST
OE,ST
TTL load: 0.8 V
2.0 V, CL = Max.
TTL load: 0.4 V
2.4 V, CL = Max.
CMOS load: 20 %
80 % V
DD
, CL= 25 pF
CMOS load: 20 %
80 % V
DD
, CL= 15 pF
CMOS load: 20 %
80 % V
DD
, CL= Max.
TTL load: 2.0 V
0.8 V, CL = Max.
TTL load: 2.4 V
0.4 V, CL = Max.
CMOS load: 80 %
20 % V
DD
, CL= 25 pF
CMOS load: 80 %
20 % V
DD
, CL= 15 pF
CMOS load: 80 %
20 % V
DD
, CL= Max.
Time at minimum operating voltage to be 0 s
Ta=+25
C, VDD =5.0 V / 3.3 V, First year
Item
Remarks
Symbol
Specifications
SG-531PTW/STW
SG-531PHW/SHW
SG-531PCW/SCW
55.0001 MHz to 135.0000 MHz
26.0001 MHz to 135.0000 MHz
-0.5 V to +7.0 V
5.0 V
0.5 V
3.3 V
0.3 V
-55
C to +100
C
-20
C to +70
C
-40
C to +85
C
B :
50 x 10
-6
C :
100 x 10
-6
--
M :
100 x 10
-6
45 mA Max.
28 mA Max.
30 mA Max.
16 mA Max.
50
A Max.
40 % to 60 %
--
--
45 % to 55 %
--
--
--
40 % to 60 %
40 % to 60 %
--
45 % to 55%
--
--
--
45 % to 55%
V
DD
-0.4 V Min.
0.4 V Max.
15 pF
--
--
5 TTL + 15 pF
--
--
25 pF
--
--
--
15 pF
15 pF
--
25 pF
--
--
50 pF
--
--
--
30 pF
2.0 V Min.
0.7 V
DD
Min.
0.8 V Max.
0.2 V
DD
Max.
2.0 ns Max.
--
--
4.0 ns Max.
--
--
--
3.0 ns Max.
--
--
--
3.0 ns Max.
--
4.0 ns Max.
4.0 ns Max.
2.0 ns Max.
--
--
4.0 ns Max.
--
--
--
3.0 ns Max.
--
--
--
3.0 ns Max.
--
4.0 ns Max.
4.0 ns Max.
10 ms Max.
5 x 10
-6
/year Max.
20 x 10
-6
Max.
Max. supply voltage
Operating voltage
Storage temperature
Operating temperature
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions
Three drops on a hard board from 750 mm or
excitation test with 29400 m/s2 x 0.3 ms x 1/2
sine wave in 3 directions